The infrared semiconductor electric griddle is a new cooking appliance that uses a wide-bandgap, multicomponent doped tin-based oxide semiconductor electrothermal film to emit infrared radiation for baking and pan-frying food. When energized, the film produces infrared radiation across 0.75–25 μm, with a main peak at 3–6 μm, to heat food directly. It is designed for rapid heating, high electrothermal conversion efficiency, even heat distribution, low-smoke cooking, and flame-free operation, helping reduce moisture loss and retain a tender texture.

Infrared semiconductor electric griddle
The infrared semiconductor electric griddle is a new cooking appliance that uses a wide-bandgap, multicomponent doped tin-based oxide semiconductor electrothermal film to emit infrared radiation for baking and pan-frying food. When energized, the film produces infrared radiation across 0.75–25 μm, with a main peak at 3–6 μm, to heat food directly. It is designed for rapid heating, high electrothermal conversion efficiency, even heat distribution, low-smoke cooking, and flame-free operation, helping reduce moisture loss and retain a tender texture.
- Product form
- Countertop electric griddle
- Application
- Baking and pan-frying food
- Price
- Quoted by specification
Brochure product information
Features
- Efficient infrared heating acts directly on food; the listed data indicates electrothermal conversion efficiency of at least 98% and lower energy consumption than conventional resistance heating.
- Flame-free infrared radiant heating is designed to reduce cooking smoke and combustion residue for a cleaner indoor environment.
- Infrared heating is designed for more even heat distribution and reduced moisture loss, helping food remain tender.
- Touchscreen controls and multiple adjustable power levels support different ingredients and cooking requirements.
- After power-off and complete cooling, the heating-griddle assembly can be washed as a whole in accordance with the instructions for the specific model.
Specifications
Wide-bandgap multicomponent doped tin-based oxide semiconductor infrared electrothermal film
Infrared radiant heating
0.75–25 μm; main peak 3–6 μm
≥98%
AC 120/220/230 V; AC/DC compatible
1500/2000 W
Application
- Baking and pan-frying food
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